MJE340 - Plastic Medium-Power NPN Silicon Transistor

1 Semiconductor Components Industries, LLC, 2013 February, 2017 Rev. 141 Publication Order Number: MJE340 /DMJE340 GPlastic medium -PowerNPN Silicon TransistorThis device is useful for high voltage general purpose Suitable for Transformerless, Line Operated Equipment High power Dissipation Rating for High Reliability These Devices are Pb Free and are RoHS Compliant* Complementary to MJE350 MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO300 VdcEmitter Base Current ContinuousIC500mAdcTotal power Dissipation@ TC = 25_CDerate above and Storage Junction Temperature RangeTJ.

2 Tstg 65 to + 150_CStresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to CHARACTERISTICS (TC = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Sustaining Voltage(IC = mAdc, IB = 0)VCEO(sus)300 VdcCollector Cutoff Current(VCB = 300 Vdc, IE = 0)ICBO 100mAdcEmitter Cutoff Current(VEB = Vdc, IC = 0)

3 IEBO 100mAdcON CHARACTERISTICSDC Current Gain(IC = 50 mAdc, VCE = 10 Vdc)hFE30240 Product parametric performance is indicated in the Electrical Characteristics forthe listed test conditions, unless otherwise noted. Product performance may notbe indicated by the Electrical Characteristics if operated under differentconditions.*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, AMPEREPOWER TRANSISTORNPN SILICON300 VOLTS, 20 225(Pb Free)500 Units/BoxMARKING DIAGRAMY= YearWW= Work WeekJE340 = Device CodeG= Pb Free Package3 BASE1 EMITTERCOLLECTOR2, 4 SCHEMATICTO 225 CASE 77 09 STYLE , CASE TEMPERATURE ( C)02040801201602012PD, power DISSIPATION (WATTS) , COLLECTOR CURRENT (mA) , VOLTAGE (VOLTS) = 25 CVBE(sat)

4 @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = 10 VFigure 1. power Temperature DeratingFigure 2. On Voltages60100140IC/IB = 3. , COLLECTOR-EMITTER VOLTAGE (VOLTS) BREAKDOWN LIMITBONDING WIRE LIMITTHERMAL LIMIT TC = 25 CSINGLE PULSEIC, COLLECTOR CURRENT (AMP)dc10 = 150 C500 msACTIVE REGION SAFE OPERATING AREAT here are two limitations on the power handling ability ofa Transistor : average junction temperature and secondbreakdown. Safe operating area curves indicate IC VCElimits of the Transistor that must be observed for reliableoperation; , the Transistor must not be subjected to greaterdissipation than the curves data of Figure 3 isbased on TJ(pk) = 150_C; TC is variable depending onconditions.

5 Second breakdown pulse limits are valid forduty cycles to 10% provided TJ(pk) 150_C. At high casetemperatures, thermal limitations will reduce the power thatcan be handled to values less than the limitations imposed bysecond , COLLECTOR CURRENT (AMP)hFE, DC CURRENT GAIN, CTJ = 25 C- 55 CFigure 4. DC Current GainFigure 5. On , COLLECTOR CURRENT (AMP) = 25 CVOLTAGE (VOLTS)VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = , TIME OR PULSE WIDTH (ms) (t), EFFECTIVE TRANSIENTqJC(t) = r(t) qJCqJC = C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) - TC = P(pk) qJC(t)P(pk)t1t2 DUTY CYCLE, D = t1/t2 SINGLE PULSETHERMAL RESISTANCE (NORMALIZED)Figure 6.

6 Thermal = = VdcVCE(sat) @ IC/IB = , COLLECTOR CURRENT (mAdc)hFE, DC CURRENT GAINTJ = 150 C+ 25 CVCE = 10 VVCE = V- 55 CFigure 7. DC Current +100 DIMENSIONSTO 225 CASE 77 09 ISSUE ADSCALE 1 :1. DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: NUMBER AND SHAPE OF LUGS VIEWBACK VIEWFRONT VIEWSIDE VIEW1233214 PIN 4 BACKSIDE TABSTYLE 1:PIN , Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

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