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MMBZxxxALT1G Series, SZMMBZxxxALT1G Series Zener …

MMBZxxxALT1G Series , SZMMBZxxxALT1G Series Zener Diodes, 24 and 40 Watt Peak Power SOT 23 Dual Common Anode Zeners These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These SOT 23. devices are ideal for situations where board space is at a premium.

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series www.onsemi.com 5 TYPICAL CHARACTERISTICS 0.1 1 10 100 1000 1 10 100 Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). PW, PULSE WIDTH (ms)

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Transcription of MMBZxxxALT1G Series, SZMMBZxxxALT1G Series Zener …

1 MMBZxxxALT1G Series , SZMMBZxxxALT1G Series Zener Diodes, 24 and 40 Watt Peak Power SOT 23 Dual Common Anode Zeners These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These SOT 23. devices are ideal for situations where board space is at a premium.

2 CASE 318. STYLE 12. Features SOT 23 Package Allows Either Two Separate Unidirectional CATHODE 1. Configurations or a Single Bidirectional Configuration 3 ANODE. Standard Zener Breakdown Voltage Range V to 47 V CATHODE 2. Peak Power 24 or 40 W @ ms (Unidirectional), per Figure 6 Waveform MARKING DIAGRAM. ESD Rating: Class 3B (> 16 kV) per the Human Body Model Class C (> 400 V) per the Machine Model ESD Rating of IEC61000 4 2 Level 4, 30 kV Contact Discharge XXXMG. Maximum Clamping Voltage @ Peak Pulse Current G. Low Leakage < mA 1.

3 Flammability Rating UL 94 V 0. SZ Prefix for Automotive and Other Applications Requiring Unique XXX = Specific Device Code Site and Control Change Requirements; AEC Q101 Qualified and M = Date Code PPAP Capable G = Pb Free Package These Devices are Pb Free and are RoHS Compliant (Note: Microdot may be in either location). Mechanical Characteristics ORDERING INFORMATION. CASE: Void-free, transfer-molded, thermosetting plastic case See detailed ordering and shipping information on page 2 of this data sheet. FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: DEVICE MARKING INFORMATION.

4 260 C for 10 Seconds See specific marking information in the device marking Package designed for optimal automated board assembly column of the table on page 3 of this data sheet. Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. Semiconductor Components Industries, LLC, 1996 1 Publication Order Number: August, 2016 Rev. 20 MMBZ5V6 ALT1/D. MMBZxxxALT1G Series , SZMMBZxxxALT1G Series MAXIMUM RATINGS.

5 Rating Symbol Value Unit Peak Power Dissipation @ ms (Note 1) MMBZ5V6 ALT1G thru MMBZ9V1 ALT1G Ppk 24 W. @ TL 25 C MMBZ12 VALT1G thru MMBZ47 VALT1G 40. Total Power Dissipation on FR 5 Board (Note 2) PD . @ TA = 25 C 225 mW . Derate above 25 C mW/ C. Thermal Resistance Junction to Ambient RqJA 556 C/W. Total Power Dissipation on Alumina Substrate (Note 3) PD . @ TA = 25 C 300 mW. Derate above 25 C mW/ C. Thermal Resistance Junction to Ambient RqJA 417 C/W. Junction and Storage Temperature Range TJ, Tstg 55 to +150 C. Lead Solder Temperature Maximum (10 Second Duration) TL 260 C.

6 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non repetitive current pulse per Figure 6 and derate above TA = 25 C per Figure 7. 2. FR 5 = x x in. 3. Alumina = x x in, alumina. *Other voltages may be available upon request. ORDERING INFORMATION. Device Package Shipping . MMBZ5V6 ALT1G SOT 23 3,000 / Tape & Reel (Pb Free). SZMMBZ5V6 ALT1G* SOT 23 3,000 / Tape & Reel (Pb Free).

7 MMBZ5V6 ALT3G SOT 23 10,000 / Tape & Reel (Pb Free). MMBZ6 VxALT1G SOT 23 3,000 / Tape & Reel (Pb Free). SZMMBZ6 VxALT1G* SOT 23 3,000 / Tape & Reel (Pb Free). MMBZ6 VxALT3G SOT 23 10,000 / Tape & Reel (Pb Free). MMBZ9V1 ALT1G SOT 23 3,000 / Tape & Reel (Pb Free). MMBZ9V1 ALT13G SOT 23 10,000 / Tape & Reel (Pb Free). MMBZxxVALT1G SOT 23 3,000 / Tape & Reel (Pb Free). SZMMBZxxVALT1G* SOT 23 3,000 / Tape & Reel (Pb Free). MMBZxxVALT3G SOT 23 10,000 / Tape & Reel (Pb Free). SZMMBZxxVALT3G* SOT 23 10,000 / Tape & Reel (Pb Free). SZMMBZxxVTALT1G* SOT 23 3,000 / Tape & Reel (Pb Free).

8 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and PPAP. Capable 2. MMBZxxxALT1G Series , SZMMBZxxxALT1G Series ELECTRICAL CHARACTERISTICS. (TA = 25 C unless otherwise noted). UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) I. Symbol Parameter IF. IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP.

9 VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VC VBR VRWM. VBR Breakdown Voltage @ IT V. IR VF. IT Test Current IT. QVBR Maximum Temperature Coefficient of VBR. IF Forward Current VF Forward Voltage @ IF. IPP. ZZT Maximum Zener Impedance @ IZT. IZK Reverse Current ZZK Maximum Zener Impedance @ IZK Uni Directional Zener ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted). UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3). (VF = V Max @ IF = 10 mA) (5% Tolerance) 24 WATTS. Max Zener VC @ IPP.

10 Breakdown Voltage Impedance (Note 5) (Note 6). IR @ ZZT. VRWM VRWM VBR (Note 4) (V) @ IT @ IZT ZZK @ IZK VC IPP QVBR. Device Device* Marking Volts mA Min Nom Max mA W W mA V A mV/5C. MMBZ5V6 ALT1G/T3G 5A6 20 11 1600 MMBZ6V2 ALT1G 6A2 MMBZ6V8 ALT1G 6A8 MMBZ9V1 ALT1G 9A1 14 (VF = V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS. Breakdown Voltage VC @ IPP (Note 6). IR Device VRWM VRWM VBR (Note 4) (V) @ IT VC IPP QVBR. Device* Marking Volts nA Min Nom Max mA V A mV/5C. MMBZ12 VALT1G 12A 200 12 17 MMBZ15 VALT1G 15A 12 50 15 21 MMBZ16 VALT1G 16A 13 50 16 23 MMBZ18 VALT1G 18A 50 18 25 MMBZ20 VALT1G 20A 17 50 20 28 MMBZ27 VALT1G/T3G 27A 22 50 27 40 MMBZ33 VALT1G 33A 26 50 33 46 MMBZ47 VALT1G 47A 38 50 47 54 (VF = V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS.


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