NCD5702 - High Current IGBT Gate Driver

1 Semiconductor Components Industries, LLC, 2017 April, 2018 Rev. 11 Publication Order Number: NCD5702 /DNCD5702 high Current igbt GateDriverThe NCD5702 is a high Current , high performance stand aloneIGBT Driver for high power applications that include solar inverters,motor control and uninterruptible power supplies. The device offers acost effective solution by eliminating many external protection features include Active Miller Clamp, accurateUVLO, EN input, DESAT protection and Active open drain FAULT output. The Driver also features an accurate V output and separatehigh and low (VOH and VOL) Driver outputs for system designconvenience. The Driver is designed to accommodate a wide voltagerange of bias supplies including unipolar and bipolar voltages. It isavailable in a 16 pin SOIC high Current Output (+4/ 6 A) at igbt Miller Plateau Voltages Low Output Impedance of VOH & VOL for Enhanced igbt Driving Short Propagation Delays with Accurate Matching Direct Interface to Digital Isolator/Opto coupler/Pulse Transformerfor Isolated Drive, Logic Compatibility for Non isolated Drive Active Miller Clamp to Prevent Spurious gate Turn on DESAT Protection with Programmable Delay Enable Input for Independent Driver Control Tight UVLO Thresholds for Bias Flexibility Wide Bias Voltage Range including Negative VEE Capability This Device is Pb Free, Halogen Free and RoHS CompliantTypical Applications Solar Inverters Motor Control Uninterruptible Power Supplies (UPS) Rapid Shutdown for Photovoltaic SystemsVCCVEEDESATVCCVEEGNDCLAMPVOHVOLVR EFENVINFLTF igure 1.

2 Simplified Application Assembly LocationWL= Wafer LotY= YearWW= Work WeekG= Pb Free PackageSOIC 16D SUFFIXCASE 751 BNCD5702DR2 GAWLYWWSee detailed ordering and shipping information on page 6 ofthis data INFORMATION12345678161211109(Top View)GNDAENVINVREFFLTNCRSVDNCCLAMPVOLVOH DESATVCC13 GND1514 VEEAVEEPIN 2. Detailed Block DiagramFigure 3. Simplified Block 1. PIN FUNCTION DESCRIPTIONPin input allows additional gating of VOH and VOL, and can be used when the Driver outputneeds to be turned off independent of the Microcontroller input. EN is internally clamped to 5 V andhas a pull up resistor of 1 signal to control the output. In applications which require galvanic isolation, VIN is generatedat the opto output, the pulse transformer secondary or the digital isolator output. VOIH/VOL signal isin phase with VIN. VIN is internally clamped to 5 V and has a pull down resistor of 1 MW to ensurethat output is low in the absence of an input signal.

3 A minimum pulse width is required at VIN be-fore VOH/VOL are V Reference generated within the Driver is brought out to this pin for external bypassing and forpowering low bias circuits (such as digital isolators).FLT4 OFault open drain output (active low) that allows communication to the main controller that the driverhas encountered a fault condition and has deactivated the output. Open drain allows easy setting of(inactive) high level and parallel connection of multiple fault to 10k pull up resistor recommended. Truth Table is provided in the datasheet to indicateconditions under which this signal is asserted. Capable of driving optos or digital isolators whenisolation is pin provides a convenient connection point for bypass capacitors ( REF) on the left side ofthe ,8xPins not internally No connection is for detecting the desaturation of igbt due to a fault condition. A capacitor connected to thispin allows a programmable blanking delay every ON cycle before DESAT fault is processed, thuspreventing false bias supply for the Driver .

4 The operating range for this pin is from UVLO to the maximum. Agood quality bypassing capacitor is required from this pin to GND and should be placed close to thepins for best high output that provides the appropriate drive voltage and source Current to the igbt low output that provides the appropriate drive voltage and sink Current to the igbt gate . VOLis actively pulled low during start up and under Fault pin should connect to the igbt Emitter with a short trace. All power pin bypass capacitorsshould be referenced to this pin and kept at a short distance from the negative voltage with respect to GND can be applied to this pin and that will allow VOL to go to anegative voltage during OFF state. A good quality bypassing capacitor is needed from VEE to a negative voltage is not applied or available, this pin must be connected to version of the VEE pin for any signal trace connection.

5 VEE and VEEA are internally clamping for the igbt gate during the off period to protect it from parasitic turn on. To betied directly to igbt gate with minimum trace length for best 2. ABSOLUTE MAXIMUM RATINGS (Note 1)ParameterSymbolMinimumMaximumUnitDiffe rential Power SupplyVCC VEE (Vmax)036 VPositive Power SupplyVCC GND Power SupplyVEE GND Output HighVOH GNDVCC + Output LowVOL GNDVEE VoltageVIN GND VoltageVEN GND VoltageVDESAT GND + CurrentSinkIFLT SINK20mAPower DissipationSO 16 packagePD900mWMaximum Junction TemperatureTJ(max)150 CStorage Temperature RangeTSTG 65 to 150 CESD Capability, Human Body Model (Note 2)ESDHBM4kVESD Capability, Machine Model (Note 2)ESDMM200 VMoisture Sensitivity LevelMSL1 Lead Temperature Soldering Reflow(SMD Styles Only), Pb Free Versions (Note 3)TSLD260 CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating This device series incorporates ESD protection and is tested by the following methods:ESD Human Body Model tested per AEC Q100 002 (EIA/JESD22 A114)ESD Machine Model tested per AEC Q100 003 (EIA/JESD22 A115)Latchup Current Maximum Rating: 100 mA per JEDEC standard: JESD78, 25 C3.

6 For information, please refer to our Soldering and Mounting Techniques Reference Manual, 3. THERMAL CHARACTERISTICSP arameterSymbolValueUnitThermal Characteristics, SOIC 16 (Note 4)Thermal Resistance, Junction to Air (Note 5)R JA145 C/W4. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Values based on copper area of 100 mm2 (or in2) of 1 oz copper thickness and FR4 PCB 4. OPERATING RANGES (Note 6)ParameterSymbolMinMaxUnitDifferential Power SupplyVCC VEE (Vmax)30 VPositive Power SupplyVCCUVLO20 VNegative Power SupplyVEE 150 VInput VoltageVIN05 VEnable VoltageVEN05 VInput Pulse Widthton40nsAmbient TemperatureTA 40125 C6. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyondthe Recommended Operating Ranges limits may affect device 5.

7 ELECTRICAL CHARACTERISTICS VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25 C,for min/max values, TA is the operating ambient temperature range that applies, unless otherwise ConditionsSymbolMinTypMaxUnitLOGIC INPUT and OUTPUTI nput Threshold VoltagesHigh state (Logic 1) RequiredLow state (Logic 0) RequiredNo state changePulse Width = 150 ns, VEN = 5 VVoltage applied to get output go highVoltage applied to get output go lowVoltage applied without change in output stateVIN H1 VIN L1 VIN Threshold VoltagesHigh stateLow stateVIN = 5 VVoltage applied to get output go highVoltage applied to get output go lowVEN HVEN CurrentHigh stateLow stateVIN H/VEN H = VVIN L/VEN L = VIEN HIEN L110mAInput CurrentHigh stateLow stateVIN H/VEN H = VVIN L/VEN L = VIIN HIIN L101mAInput Pulse WidthNo Response at the OutputGuaranteed Response at theOutputVoltage thresholds consistent with inputspecston min1ton min23515nsFLT Threshold VoltageLow StateHigh state(IFLT SINK = 15 mA)

8 Pull up ExternallyVFLT LVFLT + OUTPUTO utput Low StateIsink = 200 mA, TA = 25 CIsink = 200 mA, TA = 40 C to 125 CIsink = A, TA = 25 high StateIsrc = 200 mA, TA = 25 CIsrc = 200 mA, TA = 40 C to 125 CIsrc = A, TA = 25 Driver Current , Sink(Note 7)RG = W, VCC = 15 V, VEE = 8 VVO = 13 VVO = 9 V (near Miller Plateau)IPK snk1 IPK Driver Current , Source(Note 7)RG = W, VCC = 15 V, VEE = 8 VVO = 5 VVO = 9 V (near Miller Plateau)IPK src1 IPK CHARACTERISTICSTurn on Delay(see timing diagram)Positive input pulse width = 10 mstpd on455975nsTurn off Delay(see timing diagram)Negative input pulse width = 10 mstpd off455475nsPropagation Delay Distortion(=tpd on tpd off)For input or output pulse width > 150 ns,TA = 25 CTA = 40 C to 125 Ctdistort1tdistort2 5 2551525nsProp Delay Distortion betweenParts (Note 7)tdistort tot 30030nsRise Time (Note 7) (see timing diagram)Cload = Values based on design and/or 5.

9 ELECTRICAL CHARACTERISTICS VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25 C,for min/max values, TA is the operating ambient temperature range that applies, unless otherwise ConditionsDYNAMIC CHARACTERISTICSFall Time (Note 7) (see timing diagram)Cload = from FLT under UVLO/TSD to VOLtd1 OUT101215msDelay from DESAT to VOL(Note 7)td2 OUT220nsDelay from UVLO/TSD to FLT(Note 7)td3 CLAMPC lamp VoltageIsink = 500 mA, TA = 25 CIsink = 500 mA, TA = 40 C to 125 Activation ThresholdVMC PROTECTIONDESAT Threshold VoltageVDESAT Charge CurrentIDESAT Discharge CurrentIDESAT DIS30mAUVLOUVLO Startup VoltageVUVLO OUT Disable VoltageVUVLO OUT HysteresisVUVLO ReferenceIREF = 10 Output Current (Note 7)IREF20mARecommended CapacitanceCVREF100nFSUPPLY CURRENTC urrent Drawn from VCCVCC = 15 VStandby (No load on output, FLT, VREF)ICC Drawn from VEEVEE = 10 VStandby (No load on output, FLT, VREF)

10 IEE SB SHUTDOWNT hermal Shutdown Temperature(Note 7)TSD188 CThermal Shutdown Hysteresis(Note 7)TSH33 C7. Values based on design and/or INFORMATIOND evicePackageShipping NCD5702DR2 GSO 16(Pb Free)2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011 CHARACTERISTICSF igure 4. Propagation Delay vs. TemperatureFigure 5. Enable to Output Low DelayTEMPERATURE ( C)TEMPERATURE ( C)100806040200 20 404050607080100806040200 20 404050607080 Figure 6. Fault to Output Low DelayFigure 7. Output Rise/Fall TimeTEMPERATURE ( C)TEMPERATURE ( C)100806040200 20 40101112131415100806040200 20 40051020 Figure 8. Output Source Current vs. OutputVoltageFigure 9. Output Sink Current vs. OutputVoltageVO (V, VCC = 15 V, VEE = 8 V)VO (V, VCC = 15 V, VEE = 8 V)151050 501234678151050 501234578 PROPAGATION DELAY (ns)ENABLE TO OUTPUT LOW DELAY (ns)FAULT TO OUTPUT DELAY (ms)RISE/FALL TIME (ns)IO (A)IO (A)120tpd ontpd CHARACTERISTICSF igure 10.