P2N2222A Amplifier Transistors

1 Semiconductor Components Industries, LLC, 2013 January, 2013 Rev. 71 Publication Order Number: P2N2222A /DP2N2222 AAmplifier TransistorsNPN SiliconFeatures These are Pb Free Devices*MAXIMUM RATINGS (TA = 25 C unless otherwise noted)CharacteristicSymbolValueUnitColle ctor Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO75 VdcEmitter Base Current ContinuousIC600mAdcTotal Device Dissipation @ TA = 25 CDerate above 25 CTotal Device Dissipation @ TC = 25 CDerate above 25 COperating and Storage JunctionTemperature RangeTJ, Tstg 55 to+150 CTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to AmbientRqJA200 C/WThermal Resistance, Junction to C/WStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied.

2 Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, 92(Pb Free)5000 Units/BulkDevicePackageShipping P2N2222 AGTO 92(Pb Free)2000/Tape & AmmoORDERING INFORMATIONCOLLECTOR12 BASE3 EMITTER For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3TO 92 CASE 29 STYLE 17 MARKING DIAGRAMP2N2222 AAYWWGGA= Assembly LocationY= YearWW = Work WeekG= Pb Free Package(Note: Microdot may be in either location)P2N2222 CHARACTERISTICS (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltage(IC = 10 mAdc, IB = 0)V(BR)CEO40 VdcCollector Base Breakdown Voltage(IC = 10 mAdc, IE = 0)V(BR)CBO75 VdcEmitter Base Breakdown Voltage(IE = 10 mAdc, IC = 0)V(BR) VdcCollector Cutoff Current(VCE = 60 Vdc, VEB(off) = Vdc)ICEX 10nAdcCollector Cutoff Current(VCB = 60 Vdc, IE = 0)(VCB = 60 Vdc, IE = 0, TA = 150 C)ICBO Cutoff Current(VEB = Vdc, IC = 0)IEBO 10nAdcCollector Cutoff Current(VCE = 10 V)ICEO 10nAdcBase Cutoff Current(VCE = 60 Vdc, VEB(off) = Vdc)IBEX 20nAdcON CHARACTERISTICSDC Current Gain(IC = mAdc, VCE = 10 Vdc)(IC = mAdc, VCE = 10 Vdc)(IC = 10 mAdc, VCE = 10 Vdc)

3 (IC = 10 mAdc, VCE = 10 Vdc, TA = 55 C)(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)(IC = 150 mAdc, VCE = Vdc) (Note 1)(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)hFE355075351005040 300 Collector Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VCE(sat) Emitter Saturation Voltage (Note 1)(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VBE(sat) SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product (Note 2)(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)CfT300 MHzOutput Capacitance(VCB = 10 Vdc, IE = 0, f = MHz)Cobo Capacitance(VEB = Vdc, IC = 0, f = MHz)Cibo 25pFInput Impedance(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz) Feedback Ratio(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)hre 10 4 Small Signal Current Gain(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz)hfe5075300375 Output Admittance(IC = mAdc, VCE = 10 Vdc, f = kHz)(IC = 10 mAdc, VCE = 10 Vdc, f = kHz) Base Time Constant(IE = 20 mAdc, VCB = 20 Vdc, f = MHz)rb Cc 150psNoise Figure(IC = 100 mAdc, VCE = 10 Vdc, RS = kW, f = kHz)NF Pulse Test.

4 Pulse Width v 300 ms, Duty Cycle v fT is defined as the frequency at which |hfe| extrapolates to CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued)CharacteristicSymbolMinMaxUni tSWITCHING CHARACTERISTICSD elay Time(VCC = 30 Vdc, VBE(off) = Vdc,IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)td 10nsRise Timetr 25nsStorage Time(VCC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc) (Figure 2)ts 225nsFall Timetf 60nsFigure 1. Turn On TimeFigure 2. Turn Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITSS cope rise time < 4 ns*Total shunt capacitance of test jig,connectors, and oscilloscope.+16 V- 2 V< 2 to 100 ms,DUTY CYCLE kW+ 30 V200CS* < 10 pF+16 V-14 V0< 20 to 100 ms,DUTY CYCLE k+ 30 V200CS* < 10 pF- 4 700IC, COLLECTOR CURRENT (mA)hFE, DC CURRENT GAINTJ = 125 C25 C-55 CVCE = VVCE = 10 VFigure 3.

5 DC Current GainP2N2222 , COLLECTOR-EMITTER VOLTAGE (VOLTS) , BASE CURRENT (mA)Figure 4. Collector Saturation RegionTJ = 25 CIC = mA10 mA150 mA500 mAFigure 5. Turn On TimeIC, COLLECTOR CURRENT (mA)7010020050t, TIME (ns) = 10TJ = 25 Ctr @ VCC = 30 Vtd @ VEB(off) = Vtd @ VEB(off) = , TIME (ns) 6. Turn Off TimeIC, COLLECTOR CURRENT (mA) = 30 VIC/IB = 10IB1 = IB2TJ = 25 Ct s = ts - 1/8 tftfFigure 7. Frequency Effectsf, FREQUENCY (kHz) 8. Source Resistance EffectsRS, SOURCE RESISTANCE (OHMS)NF, NOISE FIGURE (dB) , NOISE FIGURE (dB) = OPTIMUMRS = SOURCERS = RESISTANCEIC = mA, RS = 150 W500 mA, RS = 200 W100 mA, RS = kW50 mA, RS = kWf = kHzIC = 50 mA100 mA500 k k 10 k 20 k50 k 100 kP2N2222 9. CapacitancesREVERSE VOLTAGE (VOLTS) (pF) 10.

6 Current Gain Bandwidth ProductIC, COLLECTOR CURRENT (mA)7010020030050500fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 100 VCE = 20 VTJ = 25 CFigure 11. On VoltagesIC, COLLECTOR CURRENT (mA) , VOLTAGE (VOLTS)0TJ = 25 CVBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 VFigure 12. Temperature CoefficientsIC, COLLECTOR CURRENT (mA)- + (mV/ C)- RqVC for VCE(sat)RqVB for 200500 V- 200500TO 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLES ON PAGE 2 NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYOND DIMENSION RIS LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K X XCVDNNXXSEATINGPLANEDIM MINMAXMIN 1:112312 BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACK3 NOTES:1.

7 DIMENSIONING AND TOLERANCING PERASME , CONTROLLING DIMENSION: CONTOUR OF PACKAGE BEYONDDIMENSION R IS LEAD DIMENSION IS UNCONTROLLED IN PAND BEYOND DIMENSION K X XCVDNXXSEATINGPLANEDIM LEADBULK PACKBENT LEADTAPE & REELAMMO PACKMECHANICAL CASE OUTLINEPACKAGE Semiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 Case Outline Number:XXXDOCUMENT NUMBER:STATUS:NEW STANDARD:DESCRIPTION:98 ASB42022 BON SEMICONDUCTOR STANDARDTO 92 (TO 226)Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 3TO 92 (TO 226)CASE 29 11 ISSUE AMDATE 09 MAR 2007 STYLE 1:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 6:PIN 1.

8 GATE2. SOURCE & SUBSTRATE3. DRAINSTYLE 11:PIN 1. ANODE2. CATHODE & ANODE3. CATHODESTYLE 16:PIN 1. ANODE2. GATE3. CATHODESTYLE 21:PIN 1. COLLECTOR2. EMITTER3. BASESTYLE 26:PIN 1. VCC2. GROUND 23. OUTPUTSTYLE 31:PIN 1. GATE2. DRAIN3. SOURCESTYLE 2:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. SOURCE2. DRAIN3. GATESTYLE 12:PIN 1. MAIN TERMINAL 12. GATE3. MAIN TERMINAL 2 STYLE 17:PIN 1. COLLECTOR2. BASE3. EMITTERSTYLE 22:PIN 1. SOURCE2. GATE3. DRAINSTYLE 27:PIN 1. MT2. SUBSTRATE3. MTSTYLE 32:PIN 1. BASE2. COLLECTOR3. EMITTERSTYLE 3:PIN 1. ANODE2. ANODE3. CATHODESTYLE 8:PIN 1. DRAIN2. GATE3. SOURCE & SUBSTRATESTYLE 13:PIN 1. ANODE 12. GATE3. CATHODE 2 STYLE 18:PIN 1.

9 ANODE2. CATHODE3. NOT CONNECTEDSTYLE 23:PIN 1. GATE2. SOURCE3. DRAINSTYLE 28:PIN 1. CATHODE2. ANODE3. GATESTYLE 33:PIN 1. RETURN2. INPUT3. OUTPUTSTYLE 4:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 9:PIN 1. BASE 12. EMITTER3. BASE 2 STYLE 14:PIN 1. EMITTER2. COLLECTOR3. BASESTYLE 19:PIN 1. GATE2. ANODE3. CATHODESTYLE 24:PIN 1. EMITTER2. COLLECTOR/ANODE3. CATHODESTYLE 29:PIN 1. NOT CONNECTED2. ANODE3. CATHODESTYLE 34:PIN 1. INPUT2. GROUND3. LOGICSTYLE 5:PIN 1. DRAIN2. SOURCE3. GATESTYLE 10:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. ANODE 12. CATHODE3. ANODE 2 STYLE 20:PIN 1. NOT CONNECTED2. CATHODE3. ANODESTYLE 25:PIN 1. MT 12. GATE3. MT 2 STYLE 30:PIN 1.

10 DRAIN2. GATE3. SOURCESTYLE 35:PIN 1. GATE2. COLLECTOR3. Semiconductor Components Industries, LLC, 2002 October, 2002 Rev. 0 Case Outline Number:XXXDOCUMENT NUMBER:STATUS:NEW STANDARD:DESCRIPTION:98 ASB42022 BON SEMICONDUCTOR STANDARDTO 92 (TO 226)Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in 2 OF 3 DOCUMENT NUMBER:98 ASB42022 BPAGE 3 OF 3 ISSUEREVISIONDATEAMADDED BENT LEAD TAPE & REEL VERSION. REQ. BY J. MAR 2007 Semiconductor Components Industries, LLC, 2007 March, 2007 Rev. 11 AMCase Outline Number:29ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).