TIP31A - Complementary Silicon Plastic Power Transistors

1 Semiconductor Components Industries, LLC, 2015 September, 2015 Rev. 161 Publication Order Number: TIP31A /DTIP31G, TIP31AG, TIP31BG,TIP31CG (NPN),TIP32G, TIP32AG, TIP32BG,TIP32CG (PNP) Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and High Current Gain Bandwidth Product Compact TO 220 Package These Devices are Pb Free and are RoHS Compliant*MAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageTIP31G, TIP32 GTIP31AG, TIP32 AGTIP31BG, TIP32 BGTIP31CG, TIP32 CGVCEO406080100 VdcCollector Base VoltageTIP31G, TIP32 GTIP31AG, TIP32 AGTIP31BG, TIP32 BGTIP31CG, TIP32 CGVCB406080100 VdcEmitter Base Current Current Power Dissipation@ TC = 25 CDerate above 25 CTotal Power Dissipation@ TA = 25 CDerate above 25 CUnclamped Inductive Load Energy(Note 1)E32mJOperating and Storage Junction Tem-perature RangeTJ, Tstg 65 to + 150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be IC = A, L = 20 mH, = 10 Hz, VCC = 10 V, RBE = 100 WTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to C/WThermal Resistance, Junction to C/W*For additional information on our Pb Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, 220 CASE 221 ASTYLE 1 MARKING DIAGRAM3 AMPEREPOWER TRANSISTORSCOMPLEMENTARY SILICON40 60 80 100 VOLTS,40 Device Codexx= 1, 1A, 1B, 1C,2, 2A, 2B, 2C,A= Assembly LocationY= YearWW= Work WeekGPb Free PackageTIP3xxGAYWWSee detailed ordering and shipping information on page 6 ofthis data INFORMATION1 BASE3 EMITTERCOLLECTOR2,41 BASE3 EMITTERCOLLECTOR2,4 NPNPNPTIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,TIP32CG (PNP) CHARACTERISTICS (TC = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Sustaining Voltage (Note 2)(IC = 30 mAdc, IB = 0)TIP31G, TIP32 GTIP31AG, TIP32 AGTIP31BG, TIP32 BGTIP31CG, TIP32 CGVCEO(sus)406080100 VdcCollector Cutoff Current(VCE = 30 Vdc, IB = 0)TIP31G, TIP32G, TIP31AG, TIP32AG(VCE = 60 Vdc, IB = 0)TIP31BG, TIP31CG, TIP32BG, TIP32 CGICEO Cutoff Current(VCE = 40 Vdc, VEB = 0)TIP31G, TIP32G(VCE = 60 Vdc, VEB = 0)TIP31AG, TIP32AG(VCE = 80 Vdc, VEB = 0)TIP31BG, TIP32BG(VCE = 100 Vdc, VEB = 0)TIP31CG, TIP32 CGICES 200200200200mAdcEmitter Cutoff Current(VBE = Vdc, IC = 0)IEBO CHARACTERISTICS (Note 2)DC Current Gain(IC = Adc, VCE = Vdc)(IC = Adc, VCE = Vdc)hFE2510 50 Collector Emitter Saturation Voltage(IC = Adc, IB = 375 mAdc)VCE(sat) Emitter On Voltage(IC = Adc, VCE = Vdc)

3 VBE(on) CHARACTERISTICSC urrent Gain Bandwidth Product(IC = 500 mAdc, VCE = 10 Vdc, ftest = MHz) MHzSmall Signal Current Gain(IC = Adc, VCE = 10 Vdc, f = kHz)hfe20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width 300 ms, Duty Cycle , TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,TIP32CG (PNP) 1. Power DeratingT, TEMPERATURE ( C) ON PULSEAPPROX+11 VVin 0 VEB(off)t1 APPROX+11 VVint2 TURN OFF PULSEt3t1 ns100 < t2 < 500 mst3 < 15 nsDUTY CYCLE VRB and RC VARIED TO OBTAIN DESIRED CURRENT << Ceb VFigure 2. Switching Time Equivalent 3. Turn On TimeIC, COLLECTOR CURRENT (AMP) = 10TJ = 25 Ctr @ VCC = 10 @ VEB(off) = @ VCC = 30 V20120 TCTA010203040 TCTAPD, Power DISSIPATION (WATTS)t, TIME (ms)TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,TIP32CG (PNP) , TIME (ms) (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) (t) = r(t) RqJCRqJC(t) = C/W MAXD CURVES APPLY FOR POWERPULSE TRAIN SHOWNREAD TIME AT t1TJ(pk) - TC = P(pk) ZqJC(t)P(pk)t1t2 SINGLE kD = CYCLE, D = t1/t2 Figure 4.

4 Thermal Response , COLLECTOR EMITTER VOLTAGE (VOLTS) 5. Active Region Safe Operating BREAKDOWNLIMITED @ TJ 150 CTHERMAL LIMIT @ TC = 25 C(SINGLE PULSE)BONDING WIRE ms100 , COLLECTOR CURRENT (AMP) msCURVES APPLYBELOW RATED VCEOTIP31A, TIP32 ATIP31B, TIP32 BTIP31C, TIP32 CThere are two limitations on the Power handling ability ofa transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC VCElimits of the transistor that must be observed for reliableoperation; , the transistor must not be subjected to greaterdissipation than the curves data of Figure 5 is based on TJ(pk) = 150 C; TC isvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk) 150 C. TJ(pk) may be calculated from the data in Figure high case temperatures, thermal limitations will reducethe Power that can be handled to values less than thelimitations imposed by second , COLLECTOR CURRENT (AMP)Figure 6.

5 Turn Off , TIME ( s) , REVERSE VOLTAGE (VOLTS)Figure 7. Capacitance300 CAPACITANCE (pF)20010070503010204030tf @ VCC = 30 Vtf @ VCC = 10 Vts IB1 = IB2IC/IB = 10ts = ts - 1/8 tfTJ = 25 CTJ = + 25 CCebCcbTIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,TIP32CG (PNP) , COLLECTOR-EMITTER VOLTAGE (VOLTS)TJ, JUNCTION TEMPERATURE ( C)103- , BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)hFE, DC CURRENT GAINF igure 8. DC Current GainFigure 9. Collector Saturation RegionIC, COLLECTOR CURRENT (AMP) , BASE EMITTER VOLTAGE (VOLTS)Figure 10. On VoltagesVCE = CTJ = 150 C- 55 , COLLECTOR CURRENT (AMPS) + = A20608010012016014040V, VOLTAGE (VOLTS)TJ = 25 = 25 CVBE(sat) @ IC/IB = 10 VBE @ VCE = VVCE(sat) @ IC/IB = 10V, TEMPERATURE COEFFICIENTS (mV/ C) + + + + *APPLIES FOR IC/IB hFE/2TJ = - 65 C TO + 150 C*qVC FOR VCE(sat)qVB FOR VBEF igure 11.

6 Temperature Coefficients, COLLECTOR CURRENT ( A) IC- - - + + + + + + 12. Collector Cut Off RegionFigure 13. Effects of Base Emitter ResistanceVCE = 30 VTJ = 150 C100 C25 CREVERSEFORWARDICESRBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)VCE = 30 VIC = 10 x ICESIC ICESIC = 2 x ICES(TYPICAL ICES VALUESOBTAINED FROM FIGURE 12)TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,TIP32CG (PNP) INFORMATIOND evicePackageShippingTIP31 GTO 220(Pb Free)50 Units / RailTIP31 AGTO 220(Pb Free)50 Units / RailTIP31 BGTO 220(Pb Free)50 Units / RailTIP31 CGTO 220(Pb Free)50 Units / RailTIP32 GTO 220(Pb Free)50 Units / RailTIP32 AGTO 220(Pb Free)50 Units / RailTIP32 BGTO 220(Pb Free)50 Units / RailTIP32 CGTO 220(Pb Free)50 Units / RailTO 220 CASE 221 AISSUE AKDATE 13 JAN 2022 SCALE 1:1 STYLE 1:PIN 1. BASE2. COLLECTOR3. EMITTER4. COLLECTORSTYLE 2:PIN 1. BASE2.

7 EMITTER3. COLLECTOR4. EMITTERSTYLE 3:PIN 1. CATHODE2. ANODE3. GATE4. ANODESTYLE 4:PIN 1. MAIN TERMINAL 12. MAIN TERMINAL 23. GATE4. MAIN TERMINAL 2 STYLE 7:PIN 1. CATHODE2. ANODE3. CATHODE4. ANODESTYLE 10:PIN 1. GATE2. SOURCE3. DRAIN4. SOURCESTYLE 5:PIN 1. GATE2. DRAIN3. SOURCE4. DRAINSTYLE 8:PIN 1. CATHODE2. ANODE3. EXTERNAL TRIP/DELAY4. ANODESTYLE 6:PIN 1. ANODE2. CATHODE3. ANODE4. CATHODESTYLE 9:PIN 1. GATE2. COLLECTOR3. EMITTER4. COLLECTORSTYLE 11:PIN 1. DRAIN2. SOURCE3. GATE4. SOURCESTYLE 12:PIN 1. MAIN TERMINAL 12. MAIN TERMINAL 23. GATE4. NOT CONNECTEDMECHANICAL CASE OUTLINEPACKAGE DIMENSIONS98 ASB42148 BDOCUMENT NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1TO 220onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries.

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