NTF3055L108, NVF3055L108 Power MOSFET

1 NTF3055L108, NVF3055L108 . Power MOSFET . A, 60 V, Logic Level, N Channel SOT 223. Designed for low voltage, high speed switching applications in Power supplies, converters and Power motor controls and bridge circuits. Features A, 60 V. NVF Prefix for Automotive and Other Applications Requiring RDS(on) = 120 mW. Unique Site and Control Change Requirements; AEC Q101. Qualified and PPAP Capable N Channel These Devices are Pb Free and are RoHS Compliant D. Applications Power Supplies Converters G. Power Motor Controls Bridge Circuits S. MAXIMUM RATINGS (TC = 25 C unless otherwise noted). Rating Symbol Value Unit 4. SOT 223. Drain to Source Voltage VDSS 60 Vdc CASE 318E. 1. 2 STYLE 3. Drain to Gate Voltage (RGS = MW) VDGR 60 Vdc 3.

2 Gate to Source Voltage Continuous VGS 15 Vdc MARKING DIAGRAM. Non repetitive (tp 10 ms) 20 Vpk Drain Current Adc Continuous @ TA = 25 C (Note 1) ID 3055L = Device Code AYW. Continuous @ TA = 100 C (Note 2) ID Apk A = Assembly Location 3055LG. G. Single Pulse (tp 10 ms) IDM Y = Year W = Work Week Total Power Dissipation @ TA = 25 C (Note 1) PD Watts G = Pb Free Package Total Power Dissipation @ TA = 25 C (Note 2) Watts (Note: Microdot may be in either location). Derate above 25 C W/ C. Operating and Storage Temperature Range TJ, Tstg 55 C. to 175 PIN ASSIGNMENT. 4 Drain Single Pulse Drain to Source Avalanche EAS 74 mJ. Energy Starting TJ = 25 C. (VDD = 25 Vdc, VGS = Vdc, IL(pk) = Apk, L = mH, VDS = 60 Vdc). Thermal Resistance C/W.

3 Junction to Ambient (Note 1) RqJA Junction to Ambient (Note 2) RqJA 114 1 2 3. Gate Drain Source Maximum Lead Temperature for Soldering TL 260 C. Purposes, 1/8 from case for 10 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION. device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 5 of this data sheet. 1. When surface mounted to an FR4 board using 1 pad size, 1 oz. (Cu. Area 1 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2 oz. (Cu. Area in2). Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev.

4 9 NTF3055L108/D. NTF3055L108, NVF3055L108 . ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted). Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS. Drain to Source Breakdown Voltage (Note 3) V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 mAdc) 60 68 . Temperature Coefficient (Positive) 68 mV/ C. Zero Gate Voltage Drain Current IDSS mAdc (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150 C) 10. Gate Body Leakage Current (VGS = 15 Vdc, VDS = 0 Vdc) IGSS 100 nAdc ON CHARACTERISTICS (Note 3). Gate Threshold Voltage (Note 3) VGS(th) Vdc (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) mV/ C. Static Drain to Source On Resistance (Note 3) RDS(on) mW. (VGS = Vdc, ID = Adc) 92 120. Static Drain to Source On Resistance (Note 3) VDS(on) Vdc (VGS = Vdc, ID = Adc) (VGS = Vdc, ID = Adc, TJ = 150 C).

5 Forward Transconductance (Note 3) (VDS = Vdc, ID = Adc) gfs Mhos DYNAMIC CHARACTERISTICS. Input Capacitance Ciss 313 440 pF. (VDS = 25 Vdc, VGS = 0 V, Output Capacitance Coss 112 160. f = MHz). Transfer Capacitance Crss 40 60. SWITCHING CHARACTERISTICS (Note 4). Turn On Delay Time td(on) 11 25 ns Rise Time (VDD = 30 Vdc, ID = Adc, tr 35 70. VGS = Vdc, Turn Off Delay Time RG = W) (Note 3) td(off) 22 45. Fall Time tf 27 60. Gate Charge QT 15 nC. (VDS = 48 Vdc, ID = Adc, Q1 . VGS = Vdc) (Note 3). Q2 . SOURCE DRAIN DIODE CHARACTERISTICS. Forward On Voltage (IS = Adc, VGS = 0 Vdc) VSD Vdc (IS = Adc, VGS = 0 Vdc, TJ = 150 C) (Note 3) . Reverse Recovery Time trr 35 ns (IS = Adc, VGS = 0 Vdc, ta 21 . dIS/dt = 100 A/ms) (Note 3) tb 14.

6 Reverse Recovery Stored Charge QRR mC. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 4. Switching characteristics are independent of operating junction temperatures. 2. NTF3055L108, NVF3055L108 . TYPICAL ELECTRICAL CHARACTERISTICS. 6 6. VGS = V VDS > = 10 V. ID, DRAIN CURRENT (AMPS). ID, DRAIN CURRENT (AMPS). 5 VGS = V 5. VGS = V VGS = V. 4 4. VGS = 6 V. 3 VGS = 3 V 3. TJ = 100 C. 2 VGS = 10 V 2. VGS = V. TJ = 25 C. 1 VGS = V 1. TJ = 55 C. 0 0. 0 1 2 3 1 2 3 4 5. VDS, DRAIN TO SOURCE VOLTAGE (VOLTS) VGS, GATE TO SOURCE VOLTAGE (VOLTS).

7 Figure 1. On Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN TO SOURCE RESISTANCE (W). RDS(on), DRAIN TO SOURCE RESISTANCE (W) VGS = 5 V VGS = 10 V. TJ = 100 C. TJ = 100 C. TJ = 25 C. TJ = 25 C. TJ = 55 C. TJ = 55 C. 0 1 2 3 4 5 6 0 1 2 3 4 5 6. ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS). Figure 3. On Resistance vs. Gate to Source Figure 4. On Resistance vs. Drain Current and Voltage Gate Voltage 2 10000. ID = A VGS = 0 V. RDS(on), DRAIN TO SOURCE RESISTANCE. VGS = 5 V. TJ = 150 C. 1000. IDSS, LEAKAGE (nA). (NORMALIZED). 100. TJ = 100 C. 1. 10. 1. 50 25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60. TJ, JUNCTION TEMPERATURE ( C) VDS, DRAIN TO SOURCE VOLTAGE (VOLTS). Figure 5. On Resistance Variation with Figure 6.

8 Drain to Source Leakage Current Temperature vs. Voltage 3. NTF3055L108, NVF3055L108 . TYPICAL ELECTRICAL CHARACTERISTICS. VGS, GATE TO SOURCE VOLTAGE (VOLTS). 6. VDS = 0 V VGS = 0 V TJ = 25 C. 1000. QT. 5. C, CAPACITANCE (pF). 800 Ciss VGS. 4 Q1. 600 Q2. 3. Crss 400 Ciss 2. Coss 200. 1 ID = 3 A. Crss TJ = 25 C. 0 0. 10 5 VGS 0 VDS 5 10 15 20 25 0 1 2 3 4 5 6 7 8. GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE Qg, TOTAL GATE CHARGE (nC). (VOLTS). Figure 7. Capacitance Variation Figure 8. Gate to Source and Drain to Source Voltage vs. Total Charge 1000 VDS = 30 V IS, SOURCE CURRENT (AMPS) VGS = 0 V. ID = 3 A TJ = 25 C. VGS = 5 V. 100. t, TIME (ns). tr 2. tf td(off) 10. td(on). 1 0. 1 10 100 RG, GATE RESISTANCE (W) VSD, SOURCE TO DRAIN VOLTAGE (VOLTS).

9 Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current vs. Gate Resistance EAS, SINGLE PULSE DRAIN TO SOURCE. 10 80. 100 ms ID = 7 A. 70. ID, DRAIN CURRENT (AMPS). AVALANCHE ENERGY (mJ). 1 ms 1 60. 10 ms 50. 40. VGS = 20 V dc 30. SINGLE PULSE. TC = 25 C 20. RDS(on) LIMIT. THERMAL LIMIT 10. PACKAGE LIMIT. 0. 1 10 100 1000 25 50 75 100 125 150 175. VDS, DRAIN TO SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE ( C). Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs. Safe Operating Area Starting Junction Temperature 4. NTF3055L108, NVF3055L108 . TYPICAL ELECTRICAL CHARACTERISTICS. 100. r(t), EFFECTIVE TRANSIENT THERMAL. D = RESPONSE RESISTANCE. 10 1. Single Pulse 1 10 100 1000.

10 T, TIME (s). Figure 13. Thermal Response ORDERING INFORMATION. Device Package Shipping . NTF3055L108T1G SOT 223 (TO 261). 1000 / Tape & Reel (Pb Free). NVF3055L108T1G SOT 223 (TO 261) 1000 / Tape & Reel (Pb Free). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 5. NTF3055L108, NVF3055L108 . PACKAGE DIMENSIONS. SOT 223 (TO 261). CASE 318E 04. ISSUE N. D. b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME , 1994. 2. CONTROLLING DIMENSION: INCH. 4 MILLIMETERS INCHES. DIM MIN NOM MAX MIN NOM MAX. HE E A 1 2 3 A1 b b1 c b D E e1 e e e1 L . C L1 q HE A q . (0003) STYLE 3: A1 L PIN 1. GATE. L1 2. 0 . DRAIN 10 0 10.