NTJD4001N, NVTJD4001N MOSFET – Dual, N-Channel, Small ...

1 Semiconductor Components Industries, LLC, 2015 May, 2019 Rev. 71 Publication Order Number:NTJD4001N/DNTJD4001N, NVTJD4001 NMOSFET dual , N-Channel, Small Signal, SC-8830 V, 250 mAFeatures Low Gate Charge for Fast Switching Small Footprint 30% Smaller than TSOP 6 ESD Protected Gate AEC Q101 Qualified NVTJD4001N These Devices are Pb Free and are RoHS CompliantApplications Low Side Load Switch Li Ion Battery Supplied Devices Cell Phones, PDAs, DSC Buck Converters Level ShiftsMAXIMUM RATINGS (TJ = 25 C unless otherwise stated)ParameterSymbolValueUnitsDrain to Source VoltageVDSS30 VGate to Source VoltageVGS 20 VContinuous Drain Current (Note 1)SteadyStateTA = 25 CID250mATA = 85 C180 Power Dissipation(Note 1)

2 SteadyStateTA = 25 CPD272mWPulsed Drain Currentt =10 msIDM600mAOperating Junction and Storage TemperatureTJ, TSTG 55 to150 CSource Current (Body Diode)IS250mALead Temperature for Soldering Purposes(1/8 from case for 10 s)TL260 CTHERMAL RESISTANCE RATINGS (Note 1)ParameterSymbolValueUnitJunction to Ambient Steady StateRqJA458 C/WJunction to Lead Steady StateRqJL252 Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be Surface mounted on FR4 board using min pad size (Cu area = in sq [1 oz] including traces).

3 SOT 363 CASE 419 BSTYLE 26 MARKING DIAGRAM &PIN MGG161TE= Device CodeM= Date CodeG= Pb Free PackageD1 G2 S2S1 G1 D2(Note: Microdot may be in either location)V(BR)DSSRDS(on) TYPID Max30 W @ W @ V250 mADevicePackageShipping ORDERING INFORMATIONNTJD4001NT1 GSOT 363(Pb Free)3000 / Tape &Reel For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011 ViewSOT 363SC 88 (6 LEADS)D1G2S2S1G1654123D2 NVTJD4001NT1 GSOT 363(Pb Free)3000 / Tape &ReelNTJD4001N, CHARACTERISTICS (TJ = 25 C unless otherwise stated)ParameterSymbolTest ConditionMinTypMaxUnitOFF CHARACTERISTICSD rain to Source Breakdown VoltageV(BR)

4 DSSVGS = 0 V, ID = 100 mA30 VDrain to Source Breakdown VoltageTemperature CoefficientV(BR)DSS/TJ56mV/ CZero Gate Voltage Drain CurrentIDSSVGS = 0 V, VDS = 30 to Source Leakage CurrentIGSSVDS = 0 V, VGS = 10 V CHARACTERISTICS (Note 2)Gate Threshold VoltageVGS(TH)VGS = VDS, ID = 100 Threshold Temperature CoefficientVGS(TH)/TJ CDrain to Source On ResistanceRDS(on)VGS = V, ID = 10 = V, ID = 10 TransconductancegFSVDS = V, ID = 10 mA80mSCHARGES AND CAPACITANCESI nput CapacitanceCISSVGS = 0 V, f = MHz, VDS = V2033pFOutput CapacitanceCOSS1932 Reverse Transfer Gate ChargeQG(TOT)VGS = V, VDS = 24 V, ID = Gate ChargeQG(TH) to Source to Drain CHARACTERISTICS (Note 3)Turn On Delay Timetd(ON)VGS = V, VDD = V, ID = 10 mA, RG = 50 W17nsRise Timetr23 Turn Off Delay Timetd(OFF)94 Fall Timetf82 DRAIN SOURCE DIODE CHARACTERISTICSF orward Diode VoltageVSDVGS = 0 V, IS = 10 mATJ = 25 = 125 Recovery TimetRRVGS = 0 V, dIS/dt = A/ms, IS = 10 parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

5 Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: pulse width 300 ms, duty cycle 2%.3. Switching characteristics are independent of operating junction , PERFORMANCE CURVES (TJ = 25 C unless otherwise noted) , DRAIN TO SOURCE VOLTAGE (VOLTS)ID, DRAIN CURRENT (AMPS) 1. On Region 2. Transfer CharacteristicsVGS, GATE TO SOURCE VOLTAGE (VOLTS) 3. On Resistance vs. Drain Current andTemperatureID, DRAIN CURRENT (AMPS)RDS(on), DRAIN TO SOURCE RESISTANCE (W)ID, DRAIN CURRENT (AMPS)Figure 4. On Resistance vs. Drain Current andGate Voltage 500 5. On Resistance Variation withTemperatureTJ, JUNCTION TEMPERATURE ( C)TJ = 25 = 55 CTJ = 125 C75150ID = AVGS = 10 VRDS(on), DRAIN TO SOURCERESISTANCE (NORMALIZED) 6.

6 Drain to Source Leakage Currentvs. V2 = 5 = VVGS = 10 V to 3 = 125 CVGS = 10 VTJ = 55 CTJ = 25 , DRAIN TO SOURCE VOLTAGE (VOLTS)1000010 IDSS, LEAKAGE (nA)10001001015TJ = 150 CTJ = 125 C5 VGS = 0 , DRAIN CURRENT (AMPS)RDS(on), DRAIN TO SOURCE RESISTANCE (W) = 10 VTJ = 25 = VNTJD4001N, TYPICAL PERFORMANCE CURVES (TJ = 25 C unless otherwise noted)VDS = 0 VVGS = 0 V01010302010025 GATE TO SOURCE OR DRAIN TO SOURCE VOLTAGE (VOLTS)C, CAPACITANCE (pF) , TOTAL GATE CHARGE (nC)VGS, GATE TO SOURCE VOLTAGE (VOLTS)TJ = 25 CCossCissCrssID = ATJ = 25 , SOURCE TO DRAIN VOLTAGE (VOLTS)IS, SOURCE CURRENT (AMPS)VGS = 0 VTJ = 25 7. Capacitance VariationFigure 8.

7 Gate to Source Voltage vs. TotalGate ChargeFigure 9. Diode Forward Voltage vs. (t), EFFECTIVE TRANSIENT THERMAL RESPONSEPULSE TIME t,(s)101000 SINGLE = 10. Thermal 88/SC70 6/SOT 363 CASE 419B 02 ISSUE YDATE 11 DEC 2012 SCALE 2:1 NOTES:1. DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-SIONS, OR GATE BURRS SHALL NOT EXCEED PER DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OFTHE PLASTIC BODY AND DATUM DATUMS A AND B ARE DETERMINED AT DATUM DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THELEAD BETWEEN AND FROM THE DIMENSION b DOES NOT INCLUDE DAMBAR DAMBAR PROTRUSION SHALL BE TOTAL INEXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-TION.

8 THE DAMBAR CANNOT BE LOCATED ON THE LOWERRADIUS OF THE = Specific Device CodeM= Date Code*G= Pb Free PackageGENERICMARKING DIAGRAM*16 STYLES ON PAGE 21 DIMMINNOMMAXMILLIMETERSA (Note: Microdot may be in either location)*Date Code orientation and/or position mayvary depending upon manufacturing location.*For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* : VIEWSIDE VIEWEND VIEWbbbHBSEATINGPLANEDETAIL 3 TIPSDE1 DeA2 XaaaHD2 XDLPLANEDETAIL AHGAGEL2 CcccCA26X*This information is generic.

9 Please refer todevice data sheet for actual part Free indicator, G or microdot G , mayor may not be present. Some products maynot follow the Generic CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.

10 ON Semiconductor does not convey any license under its patent rights nor therights of NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 2SC 88/SC70 6/SOT 363 Semiconductor Components Industries, LLC, 1:PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 3:CANCELLEDSTYLE 2:CANCELLEDSTYLE 4:PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODESTYLE 5:PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODESTYLE 6:PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4.