NX7002AK - Nexperia

74HC541; 74HCT541 Octal buffer/line driver; 3-state

1. General description The 74HC541; 74HCT541 is an octal non-inverting buffer/line driver with 3-state outputs. The device features two output enables (OE1 and OE2).

  Drivers, Line, Buffer, Lacto, Octal buffer line driver, Buffer line driver

MMBT3904 NPN switching transistor - Nexperia

DATA SHEET Product data sheet Supersedes data of 2002 Oct 04 2004 Feb 03 DISCRETE SEMICONDUCTORS MMBT3904 NPN switching transistor …

  Switching, Transistor, Mmbt3904, Mmbt3904 npn switching transistor

BZT52H series Single Zener diodes in a SOD123F …

1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package.

  Diode, Zener, Zener diodes in a sod123f, Sod123f

N-channel 60 V, 4.6 mΩ - Nexperia

1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

  Channel, N channel 60 v, N channel

PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor ...

1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  Surfaces, Transistor, Resistor, Equipped, Resistor equipped transistor

74HC4017; 74HCT4017 Johnson decade counter with 10 …

The 74HC4017; 74HCT4017 is a 5-stage Johnson decade counter with 10 decoded outputs (Q0 to Q9), an output from the most significant flip-flop (Q5-9), two clock inputs (CP0 and CP1) and an overriding asynchronous master reset input (MR).

  With, Decade, Output, Johnson, Counter, Decoded, Johnson decade counter with 10, Johnson decade counter with 10 decoded outputs

AEC-Q101 qualified • 1 kV ESD protected 3. Applications ...

PMV130ENEA 40 V, N-channel Trench MOSFET 5 July 2018 Product data sheet 1. General description ... • 1 kV ESD protected • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver ... Fig. 15.Gate charge waveform definitions aaa-011953 VSD (V) 0 0.4 0.8 1.2 2 1 3 4 IS (A) 0 Tj = 150 °C

  Protected, Kv esd protected, Pmv130enea

PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench …

PMDT290UCE All information provided in this document is subject to legal disclaimers. 2 J 0 8;*+ Product data sheet Rev. 1 — 6 October 2011 2 of 20

PMDT290UNE 20 V, 800 mA dual N-channel Trench MOSFET

20 V, 800 mA dual N-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet Symbol Parameter Conditions Min Typ Max Unit ... (j-sp) thermal resistance from junction to solder point--115K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 250 K/W.

PSSI2021SAY Constant current source in SOT353 package

LED driver Figure 5 shows a typical application circuit for an LED driver. The constant current ensures a constant LED brightness. Switching the current ON/OFF The output can be switched ON and OFF by connecting a resistor-equipped transistor (RET, e.g. PDTC124XU) as shown in Figure 6.

  Constant, Drivers, Current, Led driver, Constant current, Constant led

FQP30N06L 60V LOGIC N-Channel MOSFET - SparkFun …

60V LOGIC N-Channel MOSFET General Description ... VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 32 A - Continuous ... 7.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 79 W - Derate above 25°C 0.53 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL

  Channel, Mosfets, Channel mosfet, 60 v

MOSFET transistor I-V characteristics

Lecture 20-8 PMOSFETs • All of the voltages are negative • Carrier mobility is about half of what it is for n channels p+ n S G D B p+ • The bulk is now connected to the most positive potential in the circuit • Strong inversion occurs when the channel becomes as p-type as it was n-type • The inversion layer is a positive charge that is sourced by the larger potential

  Transistor, Characteristics, Channel, Mosfets, Mosfet transistor i v characteristics

MOS TRANSISTOR REVIEW - Stanford University

ec ≈ 5 × 104 V/cm for holes, hence velocity saturation for P-channel MOSFET will not become important until L < 0.25 µm. Figure. Effects of velocity saturation on the MOSFET I-V characteristics. (a)Experimental characteristics of a MOSFET with L = 2.7 µm, x0 =0.05 µm,

  Channel, Mosfets, Channel mosfet

LTC4441/LTC4441-1 - N-Channel MOSFET Gate Driver

LTC4441/LTC4441-1 1 44411fa Typical applicaTion FeaTures DescripTion N-Channel MOSFET Gate Driver The LTC®4441/LTC4441-1 is an N-channel MOSFET gate driver that can supply up to 6A of peak output current.

  Channel, Mosfets, Channel mosfet

NDS7002A - N-Channel Enhancement Mode Field Effect …

2N7000, 2N7002, NDS7002A www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value 2N7000 2N7002 NDS7002A Unit VDSS Drain−to−Source Voltage 60 V VDGR Drain−Gate Voltage (RGS ≤ 1 MW) 60 V VGSS Gate−Source Voltage − Continuous ±20 V Gate−Source Voltage − Non Repetitive (tp < 50 ms) …

  Channel, 60 v

NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK

NTD2955/D NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK-60 V, -12 A This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge

  Channel, Mosfets, 60 v

P-Channel 40 V (D-S) MOSFET - Vishay Intertechnology

P-Channel 40 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition TEFhcne †Tr ® Power MOSFET † 100 % Rg Tested † Compliant to RoHS Directive 2002/95/EC APPLICATIONS † Load Switch † DC/DC Converter Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d.

  Vishay, Channel, Mosfets, Vishay intertechnology, Intertechnology

P-Channel 80-V (D-S) MOSFET - Vishay Intertechnology

P-Channel 80-V (D-S) MOSFET ... 60 80 100 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) www.vishay.com 6 Document Number: 73438 S09-0271-Rev. C, 16-Feb-09 Vishay Siliconix Si7469DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at ...

  Vishay, Channel, Mosfets, Vishay intertechnology, Intertechnology, P channel 80 v